bipolar device
英 [ˌbaɪˈpəʊlə(r) dɪˈvaɪs]
美 [ˌbaɪˈpoʊlər dɪˈvaɪs]
网络 双极型器件; 双极性元件; 双极性器件
双语例句
- A bipolar junction transistor relates to the technical field of a semiconductor power device.
双极结型晶体管，涉及半导体功率器件技术领域。 - This paper proposed a way of high density bipolar three HDB3 code based on ISP ( in-system programmable digital circuits) device.
提出了一种采用ISP大规模可编程器件实现高密度HDB3码的一种实验方法。 - If another pacemaker is used, it should have a bipolar pacing reset mode and be programmed for bipolar pacing to minimize the possibility of the output pulses being detected by the device.
如果患者使用有其他起搏器，则该起搏器应具有一个双极起搏重置模式并针对双极起搏进行程控，以使其输出脉冲被脉冲发生器检测到的可能性降至最小。 - It has been designed and constructed with the Intersil High Frequency Bipolar Dielectric Isolation process and features dynamic parameters never before available from a truly differential device.
这已被设计与Intersil的高频双极电介质隔离工艺构造和特点，从一个以前从未真正差速器可用的动态参数。 - Though a bipolar device has high analog precision and great drive power, it has the problem of thermal swing.
先介绍了一种双极型过温保护电路，虽然这种电路模拟精度高，驱动能力强，但电路本身存在热振荡问题。 - The heterojunction bipolar transistor ( HBT) is a novel superhigh speed micro-and milli-meter wave semiconductor device. It can achieve both high speed and high amplification, which is always a conflict in homojunction bipolar transistors.
异质结双极晶体管（HBT）是一种新型的超高速、微波与毫米波半导体器件，可以有效地解决同质结双极晶体管中高速度与高放大的关系。 - It has characteristics of bipolar device and junction field-effect device. It has two kinds of carriers participating in electric conduction and the conduction ability is controled by voltage. It has larger current density and larger input resistance.
这种器件兼有双极型器件和结型场效应器件的特点，即有两种载流子参与导电，导电能力受电压控制，具有较大的电流容量和输入电阻。 - In this paper, by using a Photo-surface Controlled Negative Impedance Transistor ( PNEGIT) or a Photo-"∧" Bipolar Transistor ( PLBT) which have been fabricated by author recently, a new optical bistable device has been proposed and realized by experiment successfully.
利用作者近期研制的硅光电表面负阻晶体管（PNEGIT）或光电∧双极晶体管（PLBT）两种硅光电负阻器件，提出并成功地实现了一种新型的硅光学双稳态器件。 - In addition, as a high/ low voltage MOS device of bipolar logic circuit, the device has a better performance, compared with the VDMOS of the same materials.
所研制的器件与同材料的VDMOS相比，作为双极型模拟电路兼容的高/低压MOS器件，它具有更好的性能。 - Working in a 600V DC power supply system, the type ZDB battery charger uses new power electronic insulated-gate bipolar transistors ( IGBT) as switching device and adopts PWM control technics.
ZDB型直流电源变换器是工作在直流600V供电系统的变流装置。该装置以新颖电力器件IGBT作为开、关器件并采用PWM控制技术。 - In this paper, the design principle of heterojunction bipolar transistors ( HBTs), including energy band gap design and semiconductor material selection as well as device structure design, are discussed in more detail.
本文较详细地讨论了异质结晶体管的设计原理、材料选用和结构设计。 - Starting from two main branches, bipolar and MOS technologies, the evolving process, characteristics and the state-of-the-art of Si IC technologies are illustrated and the dependence of advances of the device on the progress of the processing technologies is also elaborated.
从双极工艺和MOS工艺两大分支说明了其发展过程、特点及现状水平，阐述了器件发展与工艺发展的相互关系。 - Ion implantation technique for the fabrication of very high-speed bipolar circuits is discussed in the paper, with emphasis on the ion implantation doping and shallow junction formation and the annealing of the implanted layer in bipolar device process.
本文讨论了高速双极器件制造中的离子注入技术。重点讨论在双极器件制造工艺中的离子注入掺杂技术，离子注入形成浅结技术，以及离子注入层的退火技术。 - Vertical Bipolar Transistors And A Merged 3-D Vertical Bipolar-MOS Device In Recrystallized Polysilicon
在再结晶多晶硅膜中制造合并3-D纵向双极-MOS器件 - This paper introduces the successful application of the program to IC bipolar device.
文中介绍了用该法编制的程序及其成功的应用。 - Firstly, by following 40V bipolar process the device can be inexpensive in cost and small in size.
首先采用40V双极型工艺可降低芯片的成本和面积； - A bipolar device may be used in nice analog integrated circuits for stable process, high speed and power drive, so a bipolar LDO is used widely.
由于双极器件开发早、工艺相对成熟、稳定，而且用双极工艺可以制造出速度高、驱动能力强、模拟精度高的器件，适用于高精度的模拟集成电路。 - IGBT ( Insulated Gate Bipolar Transistor) is the main switch power device in the power electronics. Due to the fast switching speed and low dropout voltage, it is widely used in power electronic devices.
IGBT（绝缘栅控双极型晶体管）是电力电子技术中的主流开关功率器件，由于开通／关断速度快、通态压降小等优点，在电力电子装置中得到广泛的应用。 - During the transition of injection current from bipolar current to unipolar current, the MC of the device increased firstly and fell with the decreasing current.
在注入电流从双极电流过渡到单极电流的过程中，随电流减小，器件的磁电导呈现先上升后下降的变化趋势。